New Material For Devices - The Nonvolatile FEROM

Dr.Dolly Sinha, Patna, India


We live in a world that is both dependent on materials and limited by materials everything we see and use is made of materials derived from the earth-large buildings, supersonic as artificial coffees cups. Advanced computers, sports equipment ab biomedical devices such as artificial limbs, joints and implants. Ever since the beginning of human cilization mankind has been constantly in search of materials, which betters suits a particular application.
A principal research challenge has been developing specific materials that can be used to produce faster memory devices, which can store more data in less space and consume less power. Ferroelectric materials in nano crystalline form as nanodiscs or nanorods are emerging as a potential contender for useful memory materials. There is a possibility of using single nanoparticles to store one data bit. Thus the ferroelectric random access memories (FeRAM) or (FRAM). The FeRAM or FARM can overcome the limitations of their receptivity characteristic. They can retain data until its crystal structure is changed. Their physical structure can be changed via short, low voltage heat bursts at the transition temperature. Hence these can be useful materials as programmable RAM.

 

Ferroelectric materials namely Strontium Bismuth Titanate (SBT) and lead Zirconate titanate (PZT) in bulk form are in use in memories as the memory storage elements. The FeRAM or FRAM possess the extra advantage of not being affected by the radiation in space because of their very high dielectric permittivity. By combining ferroelectric memories for space applications can be attained. These memories have high endurance, fast write times and low power performance.

While significant efforts are underway at major semiconductor manufactures worldwide to develop ferroelectric memory technology at nano level, we at the Physics Department here are doing our bit. The funding and infrastructure limitations to develop a good research laboratory in Bihar though dampening our spirits.

Contributor: Dr. Dolly Sinha, is HOD Physics and Computers, Magadh Mahila College Patna. Paper Presented in the Technical session at Sci Tech Fest (A Symposium on Cotemporary Electronics and computer Technology) Dec 24-25, Patna.

 

 

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